Semiconductor device having insulating film with surface...

Details Semiconductor device having insulating film with surface... Semiconductor device having insulating film with surface...

2009-09-11

2011-12-20

Parekh, Nitin (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S758000, C257S760000, C257S762000, C257SE23145

Reexamination Certificate

active

08080878

ABSTRACT:
Provided is a semiconductor device, which includes an interlayer insulating film formed on a semiconductor substrate, a wiring layer filled in a recess formed in the interlayer insulating film, and a cap insulating film. The interlayer insulating film includes a first SiOCH film and a surface modification layer including an SiOCH film formed by modifying a surface layer of the first SiOCH film, the SiOCH film having a lower carbon concentration and a higher oxygen concentration than the first SiOCH film has. The cap insulating film contacts with surfaces of the metal wiring and the surface modification layer.

REFERENCES:
patent: 7180191 (2007-02-01), Sasaki et al.
patent: 7427563 (2008-09-01), Lu et al.
patent: 7763979 (2010-07-01), Ohto et al.
patent: 2003/0042613 (2003-03-01), Shioya et al.
patent: 2005/0161821 (2005-07-01), Lee et al.
patent: 2004-253790 (2004-09-01), None
patent: 2007-027347 (2007-02-01), None

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