Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2011-07-12
2011-07-12
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257SE29197
Reexamination Certificate
active
07977704
ABSTRACT:
A semiconductor device having an IGBT includes: a substrate; a drift layer and a base layer on the substrate; trenches penetrating the base layer to divide the base layer into base parts; an emitter region in one base part; a gate element in the trenches; an emitter electrode; and a collector electrode. The one base part provides a channel layer, and another base part provides a float layer having no emitter region. The gate element includes a gate electrode next to the channel layer and a dummy gate electrode next to the float layer. The float layer includes a first float layer adjacent to the channel layer and a second float layer apart from the channel layer. The dummy gate electrode and the first float layer are coupled with a first float wiring on the base layer. The dummy gate electrode is isolated from the second float layer.
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Asai Makoto
Fujii Takeshi
Koyama Masaki
Okabe Yoshifumi
Yoshikawa Koh
Denso Corporation
Fuji Electric Device Technology Co. Ltd.
Patton Paul E
Posz Law Group , PLC
Smith Zandra
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