Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With means to increase breakdown voltage
Reexamination Certificate
2009-07-28
2010-10-05
Kebede, Brook (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With means to increase breakdown voltage
C257S409000, C257S484000, C257SE29066, C257SE21197
Reexamination Certificate
active
07808014
ABSTRACT:
A semiconductor device includes a semiconductor layer including a base region of a second conductive type formed in a first surface of the semiconductor layer, an emitter region of the first conductive type formed in the base region, a buffer layer of the first conductive type formed on a second surface of the semiconductor layer, and a collector layer of the second conductive type formed on the buffer layer. The buffer layer has a maximal concentration of the first conductive type impurity of approximately 5 ×1015cm−3or less, and the collector layer has a maximal concentration of the second conductive type impurity of approximately 1×1017cm−3or more. The ratio of the maximal concentration of the collector layer to that of the buffer layer is greater than 100. The collector layer has a thickness of approximately 1 μm or more.
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United States Notice of Allowance issued in U.S. Appl. No. 12/510,584 dated Sep. 9, 2009.
Kebede Brook
McDermott Will & Emery LLP
Mitsubishi Denki & Kabushiki Kaisha
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