Semiconductor device having insulated gate bipolar transistor

Details Semiconductor device having insulated gate bipolar transistor Semiconductor device having insulated gate bipolar transistor

1995-06-05

1996-09-24

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257347, 257491, H01L 2974, H01L 2701, H01L 2358

Patent

active

055593488

ABSTRACT:
A semiconductor device which allows an ON-state voltage to be lower than that of a conventional device and a method of manufacturing such a device. In this semiconductor device, a gate electrode is formed to have a planar area of its region covering a first base layer larger than that of its region covering a second base layer, thereby increasing a cathode short-circuit ratio of a cathode-shorted diode equivalent to this semiconductor device. As a result, a lower voltage than conventional ON-state can be obtained.

REFERENCES:
patent: 4963951 (1990-10-01), Adler et al.
patent: 5430316 (1995-07-01), Contiero et al.
"A Novel Heavily Doped Drift--Auxiliary Cathode Lateral Insulated Gate Transistor Structure", Haung et al., Proceedings of 1990 International Symposium, pp. 102-107.
"200.degree. C. High-Temperature and High-Speed Operation of 44OV Lateral IGBTs on 1.5 .mu.mthick SOI", Nakagawa et al., 1993 IEEE, pp. 687-690.

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