Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection
Patent
1996-12-10
1998-05-05
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Device protection
257355, 257566, 257575, 257557, 257560, 257563, H01L 2706
Patent
active
057478376
ABSTRACT:
A semiconductor device with an expanded range of a recommended condition for an input voltage is disclosed. In embodiment, the semiconductor device having input protection on an input terminal thereto, includes: a semiconductor region having a first conducting type, first and second diffusion regions defined in the semiconductor region and respectively having a second conducting type, and a transistor formed by using the semiconductor region as a base, the first diffusion region as a collector, and the second diffusion region as an emitter. The first diffusion region is connected to one of a high-potential power supply and a low-potential power supply, the second diffusion region is connected to the input terminal, and the semiconductor region is connected to another power supply having a voltage high enough to reverse bias the junction between the semiconductor region and the first diffusion region.
REFERENCES:
patent: 5373179 (1994-12-01), Matsui et al.
Microelectronics, Second Edition McGraw-Hill Book Company, 1988 "Large Signal Diode Models", pp. 52-53 pnp Fabrication, pp. 184-185.
Iwase Akihiro
Nakano Tomio
Seki Teruo
Fujitsu Limited
Hardy David B.
Thomas Tom
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