Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1992-11-05
1995-02-14
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257147, 257155, 257212, 257350, H01L 2974, H01L 31111, H01L 2358, H01L 2701
Patent
active
053898010
ABSTRACT:
A general object of the present invention is to make a maximum controllable current large without exerting adverse effect on other characteristics. In a surface of an n.sup.- layer 2 formed on a p.sup.+ substrate 1, p diffusion regions 3a, 3b and 3c are formed separated by n.sup.+ diffusion regions 4a, 4b and an oxidation film 9. Above the p diffusion regions 3b and 3c, gate electrodes 5a and 5b are formed insulated from the surrounding by an oxidation film 6. An Al-Si electrode 7 is in contact with the p diffusion region 3a and the n.sup.+ diffusion region 4a while a metal electrode 8 is in contact with the p.sup.+ substrate 1. By virtue of interposition of the oxidation film 9, a thyristor consisting of the n.sup.+ diffusion region 4a, p diffusion region 3a, n.sup.- layer 2 and p.sup.+ substrate 1 is prevented from being actuated.
REFERENCES:
patent: 4912541 (1990-03-01), Baliga et al.
patent: 4958211 (1990-09-01), Temple
IEEE Transactions on Electron Devices, vol. 38, No. 7, Jul. 1991, M. S. Shekar, et al., "Characteristics of the Emitter-Switched Thyristor", pp. 1619-1623.
Patent Abstracts of Japan, vol. 14, No. 38 (E-878), Jan. 24, 1990, JP-A-12 70 357, Oct. 27, 1989.
Majumdar Gourab
Terashima Tomohide
Loke Steven H.
Mitsubishi Denki & Kabushiki Kaisha
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