Semiconductor device having in-doped indium oxide etch stop

Details Semiconductor device having in-doped indium oxide etch stop Semiconductor device having in-doped indium oxide etch stop

1998-04-08

2000-08-01

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438722, 438740, 438742, H01L 2100

Patent

active

060966580

ABSTRACT:
A process for forming a semiconductor device using a conductive etch stop. The process includes the steps of fabricating a wafer structure up to a first level oxide deposition. A conductive etch stop is deposited over the first level oxide deposition, and selected portions of the conductive etch stop are removed. An inter-level oxide layer is deposited on the conductive etch stop, and selected portions of the inter-level oxide deposition are etched up to the conductive etch stop. The conductive etch stop may be either removed from the semiconductor or left as a conductor.

REFERENCES:
patent: 5555486 (1996-09-01), Kingon et al.
patent: 5783483 (1998-07-01), Gardner
patent: 5801094 (1998-09-01), Yew et al.
patent: 5883410 (1999-03-01), So et al.

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