Semiconductor device having improved wiring

Details Semiconductor device having improved wiring Semiconductor device having improved wiring

2006-04-07

2010-02-09

Williams, Alexander O (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Bump leads

C257SE23023, C257SE23069, C257SE23070, C257SE25023, C257SE23063, C257SE23067, C257SE21511, C257S668000, C257S686000, C257S778000, C257S738000, C257S691000, C257S208000, C257S211000, C257S735000

Reexamination Certificate

active

07659623

ABSTRACT:
An electronic component such as a semiconductor device is provided which is capable of preventing wiring breakage in a stress concentration region of surface layer wiring lines. In a semiconductor device provided with a support ball (5), no ordinary wiring line is formed in a region (7(A)) in the vicinity of the support ball (5) and a region (7(B)) at the end of the semiconductor chip facing the support ball (5), which are the stress concentration regions of the package substrate (2). Instead, a wiring line (6(C)) is formed away from these regions or a wide wiring line is formed in these regions.

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