Semiconductor device having improved surface evenness

Details Semiconductor device having improved surface evenness Semiconductor device having improved surface evenness

1995-06-01

1998-04-14

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257650, H01L 2348, H01L 2352, H01L 2940

Patent

active

057395900

ABSTRACT:
A semiconductor device is constructed to have an insulating layer containing an impurity provided upon a semiconductor substrate. This insulating layer contains a plurality of windows of different sizes. A first layer is provided in the windows. This first layer does not extend over a periphery of the windows to the surface of the insulating layer. Further, this semiconductor device is constructed such that the surface of the insulating layer and the first layer opposite the semiconductor substrate are flat. In addition, the semiconductor substrate in contact with the first layer also contains the impurity. The semiconductor device, having less surface unevenness that a conventional device, provides both improved and greater stability of device properties.

REFERENCES:
patent: 4041518 (1977-08-01), Shimizu et al.
patent: 4697328 (1987-10-01), Custode
patent: 4954865 (1990-09-01), Rokos

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