Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2008-07-02
2010-10-05
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S502000
Reexamination Certificate
active
07808071
ABSTRACT:
One aspect of a semiconductor device includes an active region located in a semiconductor substrate and having an isolation region located therebetween. The active regions have corners adjacent the isolation region. An oxide layer is located over the active regions and the corners, which may also include edges of the active regions, and a ratio of a thickness of the oxide layer over the corners to a thickness of the oxide layer over the active regions ranges from about 0.6:1 to about 0.8:1. A gate is located over the active region and the oxide layer.
REFERENCES:
patent: 7038291 (2006-05-01), Goda et al.
patent: 7119412 (2006-10-01), Yamamoto
patent: 2008/0180974 (2008-07-01), Shiraishi et al.
patent: 2009/0191688 (2009-07-01), Hu et al.
Eugen Mindricelu P.
Gilmore Damien T.
Hu Binghua
Wofford Bill A.
Brady III Wade J.
Garner Jacqueline J.
Le Thao P.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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