Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1998-03-05
2000-03-07
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257629, 257774, H01L 2358
Patent
active
060344180
ABSTRACT:
A semiconductor device which has an interlayer insulating film comprised of molecules with silicon-oxygen bonds and silicon-fluorine bonds and contains a rare gas in concentration higher than 10.sup.11 atoms per cm.sup.2. The interlayer insulating film is preferably a fluorine-containing silicon oxide film which contains a rare gas. In a manufacturing process, an interlayer insulating is formed by a chemical vapor deposition from a material gas including a silicon-containing gas, a fluorine compound gas, a rare gas, and oxygen. The silicon-containing gas is preferably SiH.sub.4 gas, and the fluorine compound gas is preferably SiF4 gas. The flow rate of the rare gas is greater than three times the total flow rate of the SiH.sub.4 gas and SiF.sub.4 gas. The rare gas is at least one type of gas selected from neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe).
REFERENCES:
patent: 5521424 (1996-05-01), Ueno et al.
patent: 5698901 (1997-12-01), Endo
patent: 5703404 (1997-12-01), Matsuura
Abstracts of the 1995 International Conference on Solid State Devices and Materials, Osaka, 1995, pp. 157-159.
Feb. 10-11, 197 DUMIC Conference 1997 ISMIC-222D/97/0205, pp. 205-212.
Feb. 10-11, 1997 DUMIC Conference 1997 ISMIC-222D/97/0041, pp. 41-48.
Hardy David B.
Mitsubishi Denki & Kabushiki Kaisha
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