Semiconductor device having improved high frequency characterist

Details Semiconductor device having improved high frequency characterist Semiconductor device having improved high frequency characterist

1978-11-03

1981-05-05

James, Andrew J.

357 52, 357 53, 357 72, 357 80, H01L 2504, H01L 2934, H01L 2940

Patent

active

042662397

ABSTRACT:
A semiconductor device in which a conducting shielding member is disposed over the space between the input and output terminal metal layers and over the semiconductor chip bonded to the output metal layer. The shielding member is electrically connected to the common terminal metal layer. This construction results in a reduction in the storage capacitance between the input and output terminal layers and improved power gain and stability of operation, particularly at high frequencies.

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patent: 4177480 (1979-12-01), Hintzmann
RCA Technical Notes; Radiation Shielding of Electronic Components; by Schenk et al., Tn. No. 1120, Jun., 1975.

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