Semiconductor device having improved element arrangement strong

Details Semiconductor device having improved element arrangement strong Semiconductor device having improved element arrangement strong

1991-07-19

1992-04-14

James, Andrew J.

357 231, 357 41, 357 51, 357 65, H01L 2348, H01L 2702, H01L 2701

Patent

active

051052563

ABSTRACT:
A semiconductor device having a high density structure and resistant against external abnormal electric charges is disclosd. The semiconductor device comprises an input diffusion resistor coupled to an external terminal and formed in a semiconductor substrate, a diffusion region formed in the semiconductor substrate and a voltage wiring having a contact portion connected to the diffusion region through at least one contact hole formed in an insulating layer covering the diffusion region. A first distance between a first end of the diffusion region close to the diffusion resistor and a first part of the contact portion nearest to the first end is made larger than a distance between a second end opposite to the first end of the diffusion region and a second part of the contact portion nearest to the second end.

REFERENCES:
patent: 4692781 (1987-09-01), Rounhra et al.
patent: 4757368 (1988-07-01), Masunaga et al.
patent: 4785343 (1988-11-01), Nezh
patent: 4803527 (1989-02-01), Hatta et al.

Affiliated with

Also associated with

Rating

Semiconductor device having improved element arrangement strong does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having improved element arrangement strong , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having improved element arrangement strong will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2353464