Semiconductor device having improved crystal orientation

Details Semiconductor device having improved crystal orientation Semiconductor device having improved crystal orientation

1997-02-18

1999-08-24

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257627, 257628, 257 66, H01L 2904

Patent

active

059427680

ABSTRACT:
TFTs of peripheral logic circuits and TFTs of an active matrix circuit (pixel circuit) are formed on a single substrate by using a crystalline silicon film. The crystalline silicon film is obtained by introducing a catalyst element, such as nickel, for accelerating crystallization into an amorphous silicon film and heating it. In doing so, the catalyst element is introduced into regions for the peripheral logic circuits in a non-selective manner, and is selectively introduced into regions for the active matrix circuit. As a result, vertical crystal growth and lateral crystal growth are effected in the former regions and the latter regions, respectively. Particularly in the latter regions, the off-current and its variation can be reduced.

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