Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-08-21
2007-08-21
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S760000
Reexamination Certificate
active
11281659
ABSTRACT:
A contact hole fabrication method for semiconductor device includes forming a dielectric layer on a semiconductor substrate, forming an antireflective layer on the dielectric layer, forming an amine source layer on the antireflective layer, forming a photoresist layer on the amine source layer, forming a first hole pattern having a T profile and a footing profile by exposing and developing the photoresist layer, forming a second hole pattern in which the profiles are changed by reflowing the photoresist layer, and forming a contact hole by selectively removing the amine source layer, the antireflective layer, and the dielectric layer using the photoresist layer as a mask.
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patent: 10-2003-0070653 (2003-09-01), None
Korean Patent Abstracts; Method for Forming Contact Hole of Semiconductor Device; Publication No. 1020030070653 A; Publication Date Sep. 2, 2003.
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Nguyen Cuong
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