Semiconductor device having improved backing conductive layers

Details Semiconductor device having improved backing conductive layers Semiconductor device having improved backing conductive layers

1994-08-02

1996-05-14

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257635, H01L 2348, H01L 2352, H01L 2940

Patent

active

055170609

ABSTRACT:
In a semiconductor device including at least two parallel conductive layers electrically isolated from each other and at least two parallel backing conductive layers opposing the two parallel conductive layers and electrically connected thereto via contact holes, a thickness of an insulating layer beneath one of the backing conductive layers is different from a thickness of an insulating layer beneath other adjacent backing conductive layers.

REFERENCES:
patent: 5306947 (1994-04-01), Adachi et al.
patent: 5384483 (1995-01-01), Huang

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