Semiconductor device having improved antireflection coating

Details Semiconductor device having improved antireflection coating Semiconductor device having improved antireflection coating

1988-09-27

1990-07-17

James, Andrew J.

357 71, H01L 2348

Patent

active

049424513

ABSTRACT:
A semiconductor device comprises a semiconductor substrate containing silicon as a constituent element, an impurity diffused layer formed in a predetermined region of the semiconductor substrate, an underlayer oxide film formed on the surface of the semiconductor substrate, an Al-Si alloy interconnection electrically connected to the impurity diffused layer through a contact hole and formed in a predetermined region on the underlayer insulating film, and an antireflection coating comprising a layer of an Al-Si-Sb alloy or a layer of an Al-Si-Sn alloy formed on the alloy interconnection.

REFERENCES:
T. Tatsuzawa et al., "St Nodule Formation in Al--Si Metallization", (Sep. 1985), Intel. Reliability Physics Symposium Proceedings, pp. 138-141.
D. Pramanik et al., "VLSI Metallization Using Aluminum and its Alloys", Solid State Technology (Mar. 1983), pp. 131-137.

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