Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Reexamination Certificate
2006-02-21
2008-11-11
Doan, Theresa T (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
C257S781000, C438S612000
Reexamination Certificate
active
07449786
ABSTRACT:
A semiconductor device with improved the adhesion between bonding pads and ball portions of gold wires is provided to improve the reliability of a semiconductor device. About 1 wt. % of Pd is contained in gold wires for connection between electrode pads formed on a wiring substrate and electrode pads (exposed areas of a top layer wiring formed mainly of Al) formed on a semiconductor chip. In bonded portions between the electrode and ball portions of the gold wires, an interdiffusion of Au and Al is suppressed to prevent the formation of Au4Al after PCT (Pressure Cooker Test). Thus, a desired bonding strength is obtained even when the pitch of the electrode pads is smaller than 65 μm and the diameter of the ball portion is smaller than 55 μm or the diameter of the wire portion of each gold wire is not larger than 25 μm.
REFERENCES:
patent: 4845543 (1989-07-01), Okikawa et al.
patent: 5891796 (1999-04-01), Nakamura et al.
patent: 6525422 (2003-02-01), Ono et al.
patent: 6601752 (2003-08-01), Maeda et al.
patent: 6815260 (2004-11-01), Ino
patent: 07-335686 (1995-12-01), None
patent: 08-127828 (1996-05-01), None
Patent Abstracts of Japan, Publication No. 08-127828, Date of publication of application: May 21, 1996; Application No. 06-265665, Date of filing: Oct. 28, 1994.
Patent Abstracts of Japan, Publication No. 07-335686, Date of publication of application: Dec. 22, 1995; Application No. 06-127905, Date of filing: Jun. 9, 1994.
Kawanabe Naoki
Matsuzawa Tomoo
Morita Toshiaki
Nishita Takafumi
Antonelli, Terry Stout & Kraus, LLP.
Doan Theresa T
Renesas Technology Corp.
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