Semiconductor device having IGBT and diode

Details Semiconductor device having IGBT and diode Semiconductor device having IGBT and diode

2007-01-03

2008-11-25

Nguyen, Kimberly D (Department: 4174)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C438S329000, C257SE29027, C257SE29028, C257SE29066, C257SE29067

Reexamination Certificate

active

07456484

ABSTRACT:
A semiconductor device includes: a semiconductor substrate having first and second semiconductor layers; an IGBT having a collector region, a base region in the first semiconductor layer, an emitter region in the base region, and a channel region in the base region between the emitter region and the first semiconductor layer; a diode having an anode region in the first semiconductor layer and a cathode electrode on the first semiconductor layer; and a resistive region. The collector region and the second semiconductor layer are disposed on the first semiconductor layer. The resistive region for increasing a resistance of the second semiconductor layer is disposed in a current path between the channel region and the cathode electrode through the first semiconductor layer and the second semiconductor layer with bypassing the collector region.

REFERENCES:
patent: 5464994 (1995-11-01), Shinohe et al.
patent: 6639295 (2003-10-01), Majumdar et al.

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