Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1991-09-27
1992-11-10
LaRoche, Eugene R.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257143, 257487, 257928, H01L 2990, H01L 2701, H01L 2906, H01L 2974
Patent
active
051628767
ABSTRACT:
A p-type emitter layer 2 is formed in one surface portion of an n.sup.- -type base layer 1 of high resistance. p.sup.+ -type contact layers 2b and n.sup.+ -type current blocking layers 6 are formed in a preset area ratio in the surface area of the p-type emitter layer. A cathode electrode 4 is formed in contact with the contact layer 2b as well as the current blocking layer 6 of the pn junction diode section. With this cathode structure, the electron injection in the ON state can be suppressed so as to reduce the carrier concentration of a portion of the n.sup.- -type base layer 1 lying on the cathode side, and the parasitic transistor effect caused at the time of reverse recovery can be suppressed by provision of the current blocking layer 6.
REFERENCES:
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patent: 4866500 (1989-09-01), Nishizawa et al.
patent: 4975755 (1990-12-01), Nishizawa et al.
Hayt, Jr. et al., "Engineering Circuit Analysis", 3rd ed., McGraw-Hill Book Co., 1978, p. 14.
IEEE Transactions on Electron Device, vol. ED-29, No. 2, Feb. 1982; Y. Amemiya et al.; "Novel Low-Loss and High-Speed Diode Utilizing an `Ideal` Ohmic Contact".
Kitagawa Mitsuhiko
Nakagawa Akio
Kabushiki Kaisha Toshiba
LaRoche Eugene R.
Shingleton Michael B.
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