Semiconductor device having high breakdown voltage

Details Semiconductor device having high breakdown voltage Semiconductor device having high breakdown voltage

1985-11-06

1987-09-01

Wojciechowicz, Edward J.

357 34, 357 37, 357 38, 357 51, H01L 2702

Patent

active

046912231

ABSTRACT:
A semiconductor device includes a semiconductor substrate having at least three semiconductor layers of alternately different conductivity types between a pair of principal surfaces. A pair of main electrodes are kept in low-resistance contact with the outermost ones of the semiconductor layers. A surface-passivation insulating film is provided on an exposed surface of the semiconductor substrate. A resistive material sheet is provided on the insulating film and connected electrically to semiconductor layers having their potentials substantially equal to the main electrodes.

REFERENCES:
patent: 3890698 (1975-06-01), Clark
patent: 4001762 (1977-01-01), Aoki et al.
patent: 4270137 (1981-05-01), Coe

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