Semiconductor device having heat radiation plate and bonding...

Details Semiconductor device having heat radiation plate and bonding... Semiconductor device having heat radiation plate and bonding...

2007-07-03

2007-07-03

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With provision for cooling the housing or its contents

C257S719000, C257S720000, C257S712000, C257S713000, C257SE23110, C257SE23113

Reexamination Certificate

active

10895947

ABSTRACT:
A semiconductor device includes a heat generation element; a bonding member; first and second heat radiation plates disposed on first and second sides of the heat generation element through the bonding member; a heat radiation block disposed between the first heat radiation plate and the heat generation element through the bonding member; and a resin mold. The heat radiation block has a thickness in a range between 0.5 mm and 1.5 mm. The semiconductor device has high reliability of the bonding member.

REFERENCES:
patent: 5651179 (1997-07-01), Bessho et al.
patent: 6166433 (2000-12-01), Takashima et al.
patent: 6281575 (2001-08-01), Nishikawa et al.
patent: 6703707 (2004-03-01), Mamitsu et al.
patent: 2002/0014703 (2002-02-01), Capote et al.
patent: 2002/0109211 (2002-08-01), Shinohara
patent: 2003/0022464 (2003-01-01), Hirano et al.
patent: A-6-163764 (1994-06-01), None
patent: A-2000-252387 (2000-09-01), None

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