Semiconductor device having hall-effect and manufacturing...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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Details

C257S637000, C257S642000, C257S734000, C257S753000, C257S759000, C257SE29019, C257SE29020

Reexamination Certificate

active

07067923

ABSTRACT:
A first insulation film is made of a silicon material and is provided on a semiconductor base. A second insulation film is made of an organic material and is provided on the first insulation film. The second insulation film is thicker than the first insulation film. A third insulation film is thinner than the second insulation film and is provided on the second insulation film. The third insulation film is made of a silicon material and has a moisture resistance property. A fourth insulation film is made of an organic material. The fourth insulation film is provided on the third insulation film to prevent a damage on the third insulation film. A wiring layer is provided on the fourth insulation film.

REFERENCES:
patent: 5010389 (1991-04-01), Gansauge et al.
patent: 6197696 (2001-03-01), Aoi
patent: 6559548 (2003-05-01), Matsunaga et al.
patent: 6657310 (2003-12-01), Lin
patent: 2001177115 (2001-06-01), None
patent: 2001-230467 (2001-08-01), None

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