Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including means for establishing a depletion region...
Patent
1996-08-28
1998-03-17
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including means for establishing a depletion region...
257355, 257494, 257544, H01L 2900
Patent
active
057290407
ABSTRACT:
A semiconductor device having the grounds of element regions are provided in a semiconductor substrate. The device comprises a semiconductor substrate of a first conductivity type, at least two element regions of a second conductivity type, provided in a semiconductor substrate and having grounds connected to said semiconductor substrate when said semiconductor substrate is set at a fixed potential and at least one ground-isolating well region of the second conductivity type, provided between said at least two element regions to electrically isolate said at least two element regions by forming a depletion layer between said at least two element regions when applied with a reverse bias voltage.
REFERENCES:
patent: 5608253 (1997-03-01), Liu et al.
Kabushiki Kaisha Toshiba
Wojciechowicz Edward
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