Semiconductor device having fuse and protection circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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Details

C257S209000, C257S360000, C257S363000, C257S379000, C257S528000, C257SE23149, C257SE23150

Reexamination Certificate

active

07816761

ABSTRACT:
A semiconductor device having a semiconductor substrate, an insulating layer, a fuse, a diffusion layer and a resistor. The semiconductor substrate has a first conductivity type. The insulating layer is selectively formed on the surface of the semiconductor substrate. The fuse is formed on the insulating layer. The diffusion layer has a second conductivity type. The diffusion layer is formed on the surface of the semiconductor substrate and electrically connected to the fuse. The first resistor is electrically connected to the fuse.

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patent: 3526853 (2004-02-01), None

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