Semiconductor device having fluorine bearing sidewall spacers an

Details Semiconductor device having fluorine bearing sidewall spacers an Semiconductor device having fluorine bearing sidewall spacers an

1997-03-21

1999-07-13

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

438591, 438756, 257346, H01L 21316

Patent

active

059239492

ABSTRACT:
Fluorine bearing spacers on the sidewalls of gate electrodes of a semiconductor device are provided to suppress hot carrier injection in the semiconductor device. In accordance with one embodiment of the invention, a semiconductor device is formed by forming at least one gate electrode on a surface of a substrate and forming fluorine bearing spacers on the sidewalls of the gate electrode. The fluorine bearing spacers may, for example, be formed of an NF.sub.3 -doped glass material.

REFERENCES:
patent: 5552332 (1996-09-01), Tseng et al.
patent: 5599726 (1997-02-01), Pan
patent: 5672525 (1997-09-01), Pan
Wolf, Stanley, Ph.D., "Silicon Processing for the VLSI Era, vol. 2: Process Integration", pp. 348-363. 1990.

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