Semiconductor device having fluorine bearing sidewall spacers an

Details Semiconductor device having fluorine bearing sidewall spacers an Semiconductor device having fluorine bearing sidewall spacers an

1998-10-30

2000-05-09

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257651, 257900, H01L 218234

Patent

active

06060767&

ABSTRACT:
Fluorine bearing spacers on the sidewalls of gate electrodes of a semiconductor device are provided to suppress hot carrier injection in the semiconductor device. In accordance with one embodiment of the invention, a semiconductor device is formed by forming at least one gate electrode on a surface of a substrate and forming fluorine bearing spacers on the sidewalls of the gate electrode. The fluorine bearing spacers may, for example, be formed of an NF.sub.3 -doped glass material.

REFERENCES:
patent: 5552332 (1996-09-01), Tseng et al.
patent: 5599726 (1997-02-01), Pan
patent: 5672525 (1997-09-01), Pan
patent: 5849643 (1998-12-01), Gilmer et al.
patent: 5907777 (1999-05-01), Joseph et al.

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