Semiconductor device having floating semiconductor zones

Details Semiconductor device having floating semiconductor zones Semiconductor device having floating semiconductor zones

1987-10-02

1988-06-07

Wojciechowicz, Edward J.

357 20, 357 34, 357 36, 357 238, 357 55, H01L 2934

Patent

active

047500280

ABSTRACT:
A semiconductor device has a surface zone which forms a planar pn junction with the surrounding substrate, this pn junction being biased in operation in the reverse direction. In order to increase the breakdown voltage, one or more floating zones are located beside the pn junction within the range of the depletion zone, which also form planar pn junctions with the substrate. According to the invention, the floating zones have an overall doping of at least 3.multidot.10.sup.11 and at most 5.multidot.10.sup.12 atoms/cm.sup.2, as a result of which they are substantially depleted at a high reverse voltage.

REFERENCES:
patent: 4573066 (1986-02-01), Whight
patent: 4602266 (1986-07-01), Coe

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