Semiconductor device having first and second semiconductor struc

Details Semiconductor device having first and second semiconductor struc Semiconductor device having first and second semiconductor struc

1995-06-23

1997-08-05

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With specified crystal plane or axis

257628, 257614, 257615, H01L 2922, H01L 2920, H01L 2904

Patent

active

056545835

ABSTRACT:
The semiconductor device has a semiconductor structure directly bonded onto another semiconductor structure of a different kind from the former. These two semiconductor structures are arranged in such a way that their crystal structures in a cross section perpendicular to the bonded interface of the two semiconductor structures are different from each other or that their lattice orders are not equivalent. This can be applied to direct bonding of any combination of semiconductor structures in any crystallographic orientation relation. This also allows bonding of three or more kinds of semiconductor structures.

REFERENCES:
patent: 5231302 (1993-07-01), Hironaka
patent: 5418374 (1995-05-01), Morita et al.
"Semiconductor Lasers on Si Substrates Using The Technology of Bonding By Atomic Rearrangement", Appln. Phys. Lett., 62(10), Mar. 8, 1993, pp. 1961-1963.
"Fabrication of (001) InP-based 1.55 um Wavelength Lasers on a (110) GaAs Substrate by Direct Bonding (A prospect for Free-Orientation Integration)", Appln. Phys. Lett., 67(6), Aug. 7, 1995, pp. 810-812.
"Anti-phase Direct Bonding and its Application to the Fabrication of InP-based 1.55 um Wavelength Lasers on GaAs Substrates," Appln. Phys. Lett. 66(4), Jan. 23, 1995, pp. 451-453.
Y. Lo, "Bonding by Atomic Rearrangement of InP/InGaAsP 1.5 .mu.m Wavelength Lasers on GaAs Substrates", Appl. Phys. Lett. 58 (18) May 6, 1991.
L. Gordon et al., "Diffusion-Bonded Stacked GaAs for Quasi-phase-matched second-harmonic generation of a carbon dioxide laser", Electronics Letters, vol. 29, No. 22, Oct. 28, 1993.

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