Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1995-12-26
1997-11-25
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257763, 257765, 257771, 257774, H01L 2348, H01L 2946, H01L 2952, H01L 2964
Patent
active
056915713
ABSTRACT:
A semiconductor device includes at least one hole formed on a semiconductor substrate. A barrier metal is formed on at least one portion in contact with the semiconductor substrate in the hole. A metal interconnection is constituted by two layers including a first Al-containing metal film formed on the barrier metal, and a second Al-containing metal film formed on the first Al-containing metal film and having a melting point lower than the melting point of the first Al-containing metal film.
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Kikuta et al, Aluminum-Germanium-Copper Multilevel Damascene Process using Low Temperature Reflow Sputtering and Chemical Mechanical Polishing, 1994 IEEE, pp. 101-104.
Hirose Kazuyuki
Kikuta Kuniko
NEC Corporation
Thomas Tom
Williams Alexander Oscar
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