Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-02-15
2005-02-15
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S238000, C438S239000, C438S386000, C257S295000, C257S296000
Reexamination Certificate
active
06855565
ABSTRACT:
First and second semiconductor regions are formed separately from each other in a semiconductor substrate. A gate electrode is formed above the semiconductor substrate which lies between the first and second semiconductor regions. An interlayer insulating film is formed on the semiconductor substrate to cover the first and second semiconductor regions and the gate electrode. First and second lower electrodes are formed on the interlayer insulating film. A first contact plug is formed in the interlayer insulating film in contact with the first lower electrode. A second contact plug is formed in the interlayer insulating film in contact with the second lower electrode. A first ferroelectric film is formed on the first lower electrode. A first upper electrode is formed on the first ferroelectric film. A second ferroelectric film is formed on the second lower electrode. A second upper electrode is formed on the second ferroelectric film.
REFERENCES:
patent: 5994153 (1999-11-01), Nagel et al.
patent: 6121649 (2000-09-01), Kunishima
patent: 6218197 (2001-04-01), Kasai
patent: 6458602 (2002-10-01), Yunogami et al.
patent: 6500677 (2002-12-01), Bergmann et al.
patent: 6620672 (2003-09-01), Dennison et al.
patent: 20010034106 (2001-10-01), Moise et al.
patent: 20020000585 (2002-01-01), Ozaki
patent: 20020038402 (2002-03-01), Kanaya
patent: 2000-22010 (2000-01-01), None
patent: 2000-183304 (2000-06-01), None
patent: 2000-349258 (2000-12-01), None
patent: 2002-110932 (2002-04-01), None
patent: 2002-190577 (2002-07-01), None
patent: 2002-217381 (2002-08-01), None
Hilliger Andreas
Kanaya Hiroyuki
Infineon - Technologies AG
Nelms David
Tran Long
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