Semiconductor device having enhanced di/dt tolerance and...

Details Semiconductor device having enhanced di/dt tolerance and... Semiconductor device having enhanced di/dt tolerance and...

2007-02-20

2007-02-20

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S328000, C257S341000

Reexamination Certificate

active

10296220

ABSTRACT:
A semiconductor device has an enhanced di/dt tolerance and a dv/dt tolerance without increasing an ON resistance. An underpad base region is provided on a region in an upper main surface of a semiconductor substrate which is provided under a gate pad, and the underpad base region is not connected to a source electrode and is not coupled to a main base region connected to the source electrode. The underpad base region is brought into a floating state.

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