Semiconductor device having element with high breakdown voltage

Details Semiconductor device having element with high breakdown voltage Semiconductor device having element with high breakdown voltage

1996-08-22

1998-03-24

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257641, 257642, 257644, 257645, 257650, H01L 2358

Patent

active

057316287

ABSTRACT:
A semiconductor device which contains an electrode or an interconnection subjected to a high voltage prevents current leakage due to polarization of a mold resin. In this semiconductor device, a glass coat film 13a covering a semiconductor element has an electrical conductivity in a range defined by the following formula (1) under the conditions of temperature between 17.degree. C. and 145.degree. C.:

REFERENCES:
patent: 4601939 (1986-07-01), Gati et al.
patent: 5061985 (1991-10-01), Megura et al.
patent: 5109267 (1992-04-01), Koblinger et al.
patent: 5439849 (1995-08-01), McBride et al.
patent: 5592024 (1997-01-01), Aoyama et al.
S. M. Sze, "VLSI Technology," 2nd ed., New York: McGraw-Hill Book Co., 1988, pp. 261, 262.

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