Semiconductor device having element with high breakdown voltage

Details Semiconductor device having element with high breakdown voltage Semiconductor device having element with high breakdown voltage

1997-11-20

1999-05-25

Ngo, Ngan Van

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257641, 257642, 257644, 257645, 257650, H01L 2358

Patent

active

059071826

ABSTRACT:
A semiconductor device which contains an electrode or an interconnection subjected to a high voltage prevents current leakage due to polarization of a mold resin. In this semiconductor device, a glass coat film 13a covering a semiconductor element has an electrical conductivity in a range defined by the following formula (1) under the conditions of temperature between 17.degree. C. and 145.degree. C.:

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patent: 5592024 (1997-01-01), Aoyama et al.
patent: 5731628 (1998-03-01), Terashima
S.M. Sze, VLSI Technology, 2nd ed., New York: McGraw-Hill Book Co., 1988, pp. 261, 262.

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