Patent
1991-02-07
1992-05-05
Hille, Rolf
357 47, 357 50, H01L 2712
Patent
active
051112728
ABSTRACT:
A semiconductor device of this invention is characterized in that one element region is electrically isolated from another element region adjacent thereto by forming a groove surrounding the one element region and a distance between the groove surrounding one element region and a groove surrounding the another element region is set to be equal to or larger than 3 .mu.m.
REFERENCES:
patent: 4631803 (1986-12-01), Hunter et al.
patent: 4746963 (1988-05-01), Uchida et al.
patent: 4799099 (1989-01-01), Verret et al.
Koyama Mitsutoshi
Miyashita Naoto
Sonobe Hironori
Takahashi Koichi
Hille Rolf
Kabushiki Kaisha Toshiba
Potter Roy
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