Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection
Reexamination Certificate
2008-07-29
2008-07-29
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Device protection
C257SE29196
Reexamination Certificate
active
10958319
ABSTRACT:
A semiconductor device includes a thyristor, trigger circuit and surge detection/leakage reduction circuit. The anode of the thyristor is connected to a first terminal and the cathode thereof is connected to a second terminal. The trigger circuit is configured to fire the thyristor when surge voltage is applied to the first terminal. The surge detection/leakage reduction circuit is provided between the gate of the thyristor and the second terminal and configured to interrupt current flowing from the trigger circuit to the second terminal in the normal operation mode and set trigger voltage which is used to fire the thyristor in cooperation with the trigger circuit at the surge voltage application time.
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patent: 6545321 (2003-04-01), Morishita
patent: 6768616 (2004-07-01), Mergens et al.
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PCT Published International Application No. US00/21316 filed on Aug. 4, 2000 (WO/01/11685 A1).
Japanese Office Action mailed on Apr. 11, 2006 corresponding to the related Japanese Patent Application No. 2004-089619.
Official Office Action Letter issued Aug. 3, 2007 in counterpart Japanese application (Application No. 2005-10060154.0.), with English language translation.
DLA Piper (US) LLP
Kabushiki Kaisha Toshiba
Weiss Howard
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