Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Ballistic transport device
Patent
1990-10-01
1995-05-16
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Ballistic transport device
257327, 257365, 257901, H01L 2968
Patent
active
054163390
ABSTRACT:
A semiconductor device for switching comprises a semiconductor substrate (10), three conductive regions (14, 16, 20) for providing a path for electrons to or from desired locations of the semiconductor substrate (10) formed at locations spaced apart on the surface of the semiconductor substrate (10, 28), a device (22, 24) for causing a current between the first and second conductive regions (14, 16), and a device (18) for forming electric field for diverting the caused current to the third conductive region (20). Since the current flowing to the first and second conductive regions (14, 16) is diverted to the third conductive region (20), switching operation between the first and second conductive regions (14, 16) is implemented.
REFERENCES:
patent: 4409723 (1983-10-01), Harari
patent: 4577212 (1986-03-01), Hueckel et al.
patent: 4680603 (1987-07-01), Wei et al.
patent: 5003365 (1991-03-01), Havemann et al.
Publication "Basic Knowledge of Quantum-Effect Devices", The Japan Society of Applied Physics, Mar. 1989. (Partial Translation).
Fujinaga Masato
Kotani Norihiko
Yamano Tsuyoshi
Limanek Robert P.
Mitsubishi Denki & Kabushiki Kaisha
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