Semiconductor device having electrically insulating substrate of

Details Semiconductor device having electrically insulating substrate of Semiconductor device having electrically insulating substrate of

1982-12-16

1986-02-18

Edlow, Martin H.

357 81, 357 80, H01L 2336, H01L 2314, H01L 2308, H01L 2354

Patent

active

045716102

ABSTRACT:
Disclosed are semiconductor devices in which an electrical insulating substrate is made of a sintered silicon carbide body having thermal conductivity of at least 0.4 cal/cm.multidot.sec.multidot..degree.C. at 25.degree. C., electrical resistivity of at least 10.sup.7 ohm.multidot.cm at 25.degree. C. and coefficient of thermal expansion of 3.3.about.4.times.10.sup.-6 /.degree.C. at 25.degree. C. to 300.degree. C.

REFERENCES:
patent: 3993602 (1976-11-01), Prochazka
patent: 4172109 (1979-10-01), Smoak
patent: 4352120 (1982-09-01), Kurihara et al.
patent: 4370421 (1983-01-01), Matsushita et al.

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