Semiconductor device having electrically insulating barriers for

Details Semiconductor device having electrically insulating barriers for Semiconductor device having electrically insulating barriers for

1974-11-18

1976-06-01

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 24, 357 41, 357 45, 307238, H01L 2712

Patent

active

039613550

ABSTRACT:
A semiconductor device has a heavily doped semiconductor substrate with a lightly doped epitaxial layer overlying a surface of the substrate and of the same conductivity type as the substrate. Electrically insulating barriers extend from at least the surface of the epitaxial layer into the substrate so as to electrically isolate non-common areas of each surface leakage sensitive device within the epitaxial layer from the non-common areas of adjacent surface leakage sensitive devices.

REFERENCES:
patent: 3354360 (1967-11-01), Campagna et al.
patent: 3492174 (1970-01-01), Nakamura et al.
patent: 3509433 (1970-04-01), Schroeder
patent: 3648125 (1972-03-01), Peltzer
patent: 3783047 (1974-01-01), Paffew et al.
patent: 3786318 (1974-01-01), Monoi et al.
patent: 3906544 (1975-09-01), Engeler et al.

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