Semiconductor device having electric contacts with precise resis

Details Semiconductor device having electric contacts with precise resis Semiconductor device having electric contacts with precise resis

1987-06-23

1988-07-12

Carroll, J.

357 65, 357 68, H01L 2702, H01L 2348

Patent

active

047573686

ABSTRACT:
A semiconductor device includes a diffusion layer in the semiconductor substrate thereof; and an insulation layer is formed on the semiconductor substrate and is provided with a contact window therein, so as to electrically connect a conductive metal layer with the diffusion layer composed of Si atoms as a base material. A Si atom supplier is formed close to the contact window at the area where the Si atoms diffuse into the conductive metal layer. Preferably, the Si atom supplier comprises a dummy contact window similar to the above-mentioned real contact window.

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