Semiconductor device having dummy patterns and an upper insulati

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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Details

257759, 257760, 257794, 257797, H01L 2348, H01L 2352, H01L 2940

Patent

active

056524650

ABSTRACT:
A semiconductor device comprises a plurality of wiring formed on a lower insulating film to be spaced apart from each other, dummy patterns formed on the lower insulating layer between the plurality of wiring and spaced apart from each other, and an upper insulating layer formed to cover the plurality of wiring and the dummy patterns and having cavities formed in regions between the plurality of wiring and the dummy patterns.

REFERENCES:
patent: 5293503 (1994-03-01), Nishigoori
patent: 5430325 (1995-07-01), Sawada et al.

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