Semiconductor device having dummy pattern and the method for...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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Details

C257S781000, C438S926000, C438S508000

Reexamination Certificate

active

07902671

ABSTRACT:
A semiconductor device includes a semiconductor substrate with a pattern region and a dummy region, an interlayer dielectric film arranged on the semiconductor substrate, a semiconductor layer pattern arranged on the interlayer dielectric film in the pattern region, a dummy pattern arranged on the interlayer dielectric film in the dummy region, a contact plug arranged inside the interlayer dielectric film, and the contact plug connecting the semiconductor layer pattern to the semiconductor substrate, and a dummy plug arranged inside the interlayer dielectric film, the dummy plug corresponding to the dummy pattern. A method for fabricating the semiconductor device includes forming these structures.

REFERENCES:
patent: 2002/0151131 (2002-10-01), Mori
patent: 2005/0194616 (2005-09-01), Yoon et al.
patent: 2007/0034962 (2007-02-01), Kang et al.
patent: 10-2006-0039296 (2006-05-01), None
patent: 10-2006-0073818 (2006-06-01), None

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