Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2011-03-08
2011-03-08
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S781000, C438S926000, C438S508000
Reexamination Certificate
active
07902671
ABSTRACT:
A semiconductor device includes a semiconductor substrate with a pattern region and a dummy region, an interlayer dielectric film arranged on the semiconductor substrate, a semiconductor layer pattern arranged on the interlayer dielectric film in the pattern region, a dummy pattern arranged on the interlayer dielectric film in the dummy region, a contact plug arranged inside the interlayer dielectric film, and the contact plug connecting the semiconductor layer pattern to the semiconductor substrate, and a dummy plug arranged inside the interlayer dielectric film, the dummy plug corresponding to the dummy pattern. A method for fabricating the semiconductor device includes forming these structures.
REFERENCES:
patent: 2002/0151131 (2002-10-01), Mori
patent: 2005/0194616 (2005-09-01), Yoon et al.
patent: 2007/0034962 (2007-02-01), Kang et al.
patent: 10-2006-0039296 (2006-05-01), None
patent: 10-2006-0073818 (2006-06-01), None
Hynix / Semiconductor Inc.
Jackson, Jr. Jerome
Marshall & Gerstein & Borun LLP
Page Dale
LandOfFree
Semiconductor device having dummy pattern and the method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having dummy pattern and the method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having dummy pattern and the method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2669084