Semiconductor device having double metal connection layers conne

Details Semiconductor device having double metal connection layers conne Semiconductor device having double metal connection layers conne

1994-10-17

1996-09-24

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With peripheral feature due to separation of smaller...

257629, 437226, H01L 2358, H01L 2940

Patent

active

055593623

ABSTRACT:
In a semiconductor device having two metal connection layers formed on a scribe line area, the metal connection layers are connected to each other and further to a semiconductor substrate. The two metal connection layers are connected to each other via contact holes arranged along the scribe line area. This enhances heat dissipation and heat conductivity to allow heat to be rapidly transferred to the semiconductor substrate.

REFERENCES:
patent: 4364078 (1982-12-01), Smith et al.
patent: 4835592 (1989-05-01), Zommer
patent: 5300816 (1994-04-01), Lee et al.
patent: 5391920 (1995-02-01), Tsuji
By Tanaka, Masaki et al., "An Advanced ESD Test Method for Charged Device Model", EOS/ESD Symposium, 1992, pp. 76-87. No month.

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