Semiconductor device having doping multilayer structure

Details Semiconductor device having doping multilayer structure Semiconductor device having doping multilayer structure

1986-03-13

1988-11-15

Carroll, J.

357 4, 357 16, 357 34, 357 58, H01L 2972, H01L 2712, H01L 29161

Patent

active

047853409

ABSTRACT:
A semiconductor device includes a multilayer semiconductor structure comprising alternately p- (or n-) type heavily doped semiconductor layers and n- (or p-) type lightly doped semiconductor layers. Holes (or electrons) are confined within a narrow layer in a fashion like a two-dimensional gas, whereby high mobility is realized notwithstanding of high carrier concentration. Electrical conductivity of the multilayer semiconductor structure can be made higher than that of a bulk semiconductor. Very high conductivity can be realized by forming each layer in a thickness within a range of 10 .ANG. to 1000 .ANG. and preferably 50 .ANG. to 500 .ANG.. Ratio in impurity concentration of the heavily doped layer to the low doped layer is not smaller than one order of magnitude.

REFERENCES:
patent: 4163237 (1979-07-01), Dingle et al.
patent: 4378629 (1983-04-01), Bozler et al.
patent: 4514747 (1985-04-01), Miyata et al.
patent: 4667211 (1987-05-01), Iafrate et al.
Kroemer, "Heterostructure Bipolar Transistors: What Should We Build?", pp. 26-130, J. Vac. Sci. Technol. B1 (2), Apr.-Jun. 1983.
Bozler et al, "Fabrication and Numerical Simulation of the Permeable Base Transistor", pp. 1128-1141, IEEE Transactions on Electron Devices, vol. ED-27, No. 6, Jun. 1980.
Ploog et al, "Compositional and Doping Superlattices in III-V Semiconductors", pp. 285-359, Advances in Physics, 1983, vol. 32, No. 3.
Dohler, "Ultrathin Doping Layers as a Model for ED Systems", Surface Science, pp. 97 to 105, vol. 73, 1978.
Dohler, "Doping Superlattices", J. Vac. Sci. Technol., 1C (3), May/Jun. 1979, pp. 851 to 856.
Dohler, "Solid-State Superlattices", Scientific American, Nov. 1983, pp. 144 to 151.

Affiliated with

Also associated with

Rating

Semiconductor device having doping multilayer structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having doping multilayer structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having doping multilayer structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1106318