Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1998-02-03
1999-08-03
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 59, 257 72, 257347, 438166, 349 41, 349 43, H01L 2976
Patent
active
059328932
ABSTRACT:
An insulated gate field effect transistor comprises a silicon channel region. The silicon is crystallized by heat annealing while a suitable metal element such as nickel helps the crystallization. The crystallization proceeds in the silicon film laterally from the portion where the nickel is directly introduced. The TFT is arranged in such a manner that the source-drain direction of the TFT is aligned with the direction of the crystal growth or intersects with the crystal growth direction at a desired direction.
REFERENCES:
patent: 5705829 (1998-01-01), Miyanaga et al.
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R.J. Nemanich et al., J. Vac. Sci. Technol., 19(3), 1981, 685-688, "Interference Enhanced Raman Scattering Study of the Interfacial Reaction of Pd on a-Si:H".
G. Radnoczi et al., J. Appl. Phys., 69(9), 1991, 6394-6399, "Al Induced Crystallization of a-Si".
C.C. Tsai, International Electron Devices and Materials Symposium, 1990, "Growth of Amorphous, Microcrystalline, and Epitaxial Silicon in Low Temperature Plasma Deposition".
Choi et al., Japan J.Appl. Phys., 33, 1994, L83-L86, "The Annealing Effects of Excimer-Laser-Produced Large-Grain Poly-Si Thin-Film Transistors".
Miyanaga Akiharu
Ohtani Hisashi
Teramoto Satoshi
Costellia Jeffrey L.
Ferguson Jr. Gerald J.
Martin-Wallace Valencia
Semiconductor Energy Laboratory Co,. Ltd.
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