Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2005-05-31
2005-05-31
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S276000, C257S272000, C257S256000, C257S401000
Reexamination Certificate
active
06900482
ABSTRACT:
A high-frequency semiconductor device for power amplification has a comb-teeth electrode on each of active regions formed on the front surface of the semiconductor substrate. One aspect of the present invention, there is provided a monolithic microwave integrated circuit (MMIC) having a plurality of rectangular-shaped active regions arranged side by side on the front surface of the semiconductor substrate, each of the active regions having interdigited gate, drain and source electrodes thereon which are connected to the respective pads by multilayer interconnection technique. Additionally, the source potential is fed from the back surface of the substrate through a metal plugged via-hole.
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Aoki Yoshio
Baba Osamu
Gotoh Muneharu
Mimino Yutaka
Armstrong Kratz Quintos Hanson & Brooks, LLP
Fujitsu Quantum Devices Limited
Loke Steven
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