Semiconductor device having directly connected source terminal

Details Semiconductor device having directly connected source terminal Semiconductor device having directly connected source terminal

1988-04-19

1991-01-08

Sikes, William L.

357 65, H01L 2702

Patent

active

049840517

ABSTRACT:
The present invention relates to an improvement in an electrode structure of a semiconductor device having a MOSFET chip, wherein a source terminal is directly connected to a source electrode of the semiconductor device so that the source terminal overlaps with the source electrode. By employing the electrode structure, a semiconductor device having a high switching speed, low power loss and high mass productivity is obtained.

REFERENCES:
patent: 4574299 (1986-03-01), Glascock
patent: 4866502 (1989-09-01), Tomaszewski et al.

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