Semiconductor device having diffraction grating

Details Semiconductor device having diffraction grating Semiconductor device having diffraction grating

1995-07-20

1997-09-02

Tran, Minhloan

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With specified crystal plane or axis

257 14, 257 23, 257102, 372 45, 372 46, H01L 2904, H01S 319

Patent

active

056635923

ABSTRACT:
A semiconductor device has a substrate composed of a semiconductor which has one of sphalerite and diamond crystal structures. The substrate has a plane orientation inclined at 0.5.degree. to 15.degree. with respect to one of {111} and {110} planes indicated by Miller indices. A first semiconductor layer is formed on the substrate. The first semiconductor layer has a sawtooth-shaped first periodic structure consisting of one of the {111} and {110} planes indicated by the Miller indices and at least one plane indicated by another index. A second semiconductor layer is formed on the first semiconductor layer. The second semiconductor layer has a second periodic structure having a phase shifted from a phase of the first periodic structure.

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"Distributed Feedback Structure Produced Without Growth Interruption," IBM Technical Disclosure Bulletin, vol. 32, No. 9A, pp. 260-261 (1990).
Colas, E. et al., "Direct evidence of lateral bandgap patterning on stepped structures grown on non-planar, vicinal GaAs surfaces by cathodoluminescence investigations," Journal of Crystal Growth, vol. 107, No. 1/4, pp. 243-247 (1991).
"P-N Junction Between Two-Dimensional Electrons and Holes," IBM Technical Disclosure Bulletin, vol. 34, No. 6, pp. 273-274 (1991).

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