Semiconductor device having differently doped diamond layers

Details Semiconductor device having differently doped diamond layers Semiconductor device having differently doped diamond layers

1991-05-09

1993-10-12

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257472, H01L 29161, H01L 2920

Patent

active

052528405

ABSTRACT:
A semiconductor device having active parts made from semiconductor diamond. The active parts include a high doped diamond layer for supplying free carriers and a non- or low doped diamond layer for giving the free carriers a conductive region. The free carriers are transferred from the high doped diamond layer to the non- or low doped diamond layer by diffusion or an applied electric field. Since the free carriers move at high speeds in the non- or low doped diamond layer without being scattered by dopant atoms, the semiconductor device is applicable to high frequency devices with stability against a change in temperature.

REFERENCES:
patent: 4929986 (1990-05-01), Yoder
patent: 5006914 (1991-04-01), Beetz, Jr.
patent: 5107315 (1992-04-01), Kumagai et al.
patent: 5132749 (1992-07-01), Nishibayashi et al.

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