Semiconductor device having different types of memory cell...

Details Semiconductor device having different types of memory cell... Semiconductor device having different types of memory cell...

2005-01-04

2005-01-04

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Format or disposition of elements

C365S063000, C365S222000

Reexamination Certificate

active

06839260

ABSTRACT:
To provide a semiconductor memory device capable of fast rewriting with a small area, and/or large-capacity operation with a small area or fast operation and low power consumption operation, peripheral circuits such as logic circuit, buffer memory and sense circuit or part thereof are formed on a semiconductor substrate surface, and memory cells are provided thereon with an insulator film interposed therebetween.

REFERENCES:
patent: 5719633 (1998-02-01), Nishio et al.
patent: 5815441 (1998-09-01), Kobatake
patent: 6632706 (2003-10-01), Leedy
patent: 5-82787 (1993-04-01), None
IEICE Transactions, vol. E 74, pp. 130-141, 1991.
IEEE International Solid State Circuit Conference, pp. 266-267, 1996.
K. Yano et al., “A Room Temperature Single Electron Memory Device Using Fine-Grain Polycrystalline Silicon”, IEDM 1993, pp. 541-544.

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